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t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 1 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com applications ? commercial and military radar ? satellite communications functional block diagram general description triquints tga2621 - sm is a packaged ku - band power ampli fier fabricated on triquints tqpht15 0.15 m gaas phemt process . the tga2621 - sm operates from 16 to 18 .5 ghz and typically provides greater than 1w of saturated output power with greater than 23 % pae and greater than 2 4.5 db of small signal gain. the tga2621 - sm is available in a low cost, surface mount 32 lead 5x5 mm air - cavity ceramic qfn. i t is ideally suited to support both radar and satellit e communications as a driver or low power amplifier . both rf ports have integrat ed dc blocking caps a nd are fully matched to 50 ohms allowing for simple system integration. lead - free and rohs compliant evaluation boards are available upon request. p ad configuration p ad no. symbol 1, 2, 4, 6, 8 - 9 ,1 6 - 17 , 1 9, 21 , 23 - 25 , 32 - 33 gnd 3 , 7, 10 - 15, 18, 22, 26, 28, 30 n/c 5 rf in 20 rf out 2 7 v d 2 29 v d 1 31 v g ordering information part eccn description tga2621 - sm ear99 16 C 18 .5 ghz 1 w gaas p a product features ? frequency range: 16 C 18 .5 ghz ? p sat : >30 dbm at pin = 10 dbm ? pae: >23 % at pin = 10 dbm ? small signal gain: >2 4.5 db ? input return loss: > 10 db ? bias: v d = 6 v, i dq = 5 00 ma, v g = - 0.6 v typical ? package dimensions: 5 .0 x 5 .0 x 1.45 mm
t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 2 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 6 .25 v gate voltage range (v g ) - 2 to 0 v drain current (i d ) 1300 ma gate current (i g ) - 5 to 5 ma power dissipation , cw, 85 c (p diss ) 3 .0 w input power , cw, 85 c, 50 , (p in ) 17 dbm input power , cw, 85 c, (3:1 vswr) , (p in ) 17 dbm channel temperature (t ch ) 20 0 c mounting temperature (30 seconds) 26 0 c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 6 v drain current (i d q ) 50 0 m a gate voltage (v g ) - 0.6 v typical temperature (t base ) - 40 to 85 c electrical specifications are measured at specified test conditions. specifications are not guaranteed overall operating conditions. electrical specifications test conditions unless otherwise noted: 25 0 c, v d = 6 v, i d q = 50 0 m a, v g = - 0.6 v typical , cw parameter min typical max units operational frequency range 16 18 .5 ghz small signal gain >2 4.5 db input return loss > 1 0 db output return loss 6 db output power (pin = 10 dbm) > 30 dbm power added efficiency (pin = 10 dbm) > 2 3 % small signal gain temperature coefficient - 0.0 36 db/c output power temperature coefficient - 0.0 2 db/c
t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 3 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c, v d = 5 v i dq = 50 0 ma, i d_drive = 627 ma p in = 10 dbm, p out = 2 8.3 dbm, freq = 16 ghz, p diss = 1.7 w 30.6 oc/w channel temperature (t ch ) (under rf drive ) 137 c median lifetime (t m ) 4.6 x 10^6 hrs thermal resistance ( jc ) (1) t base = 85 c, v d = 5.5 v i dq = 50 0 ma, i d_drive = 645 ma p in = 10 dbm, p out = 28.7 dbm, freq = 16 ghz, p diss = 1.9 w 31.3 oc/w channel temperature (t ch ) (under rf drive) 145 c median lifetime (t m ) 1.8 x 10^6 hrs thermal resistance ( jc ) (1) t base = 85 c, v d = 6 v i dq = 50 0 ma, i d_drive = 665 ma p in = 10 dbm, p out = 29 dbm, freq = 16 ghz, p diss = 2.2 w 31.9 oc/w channel temperature (t ch ) (under rf drive) 154 c median lifetime (t m ) 6.7 x 10^ 5 hrs 1. r e sistance measured at back of the package. test conditions: v d = 6 v; failure criteria is 10% reduction in i d_max 1e+03 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 25 50 75 100 125 150 175 200 median lifetime, t m (hours) channel temperature, t ch ( c) median lifetime vs. channel temperature fet5 29.0 29.5 30.0 30.5 31.0 31.5 32.0 32.5 33.0 1.5 1.7 1.9 2.1 2.3 r jc (c/w) p diss (w) thermal resistance vs. p diss t base = + 85 c 1 1.5 2 2.5 3 15 16 17 18 19 p diss (w) frequency (ghz) p diss vs. frequency vs. t base -40c +25c +85c p in = 10 dbm v d = 6 v, i dq = 500ma cw 0.5 1 1.5 2 2.5 15 16 17 18 19 p diss (w) frequency (ghz) p diss vs. freq. vs. drain voltage 5.0 v 5.5 v 6.0 v p in = 10 dbm i dq = 500 ma cw t base = +85 c
t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 4 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance : small signal 15 18 21 24 27 30 15 16 17 18 19 20 s21 (db) frequency (ghz) gain vs. frequency vs. temperature - 40 c 25 c 85 c v d = 6.0 v, i dq = 500 ma 15 18 21 24 27 30 15 16 17 18 19 20 s21 (db) frequency (ghz) gain vs. frequency vs. drain voltage 5.0 v 5.5 v 6.0 a temp = 25 c i dq = 500 ma -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 15 16 17 18 19 20 s11 (db) frequency (ghz) input return loss vs. frequency vs. temp. - 40 c 25 c 85 c v d = 6.0 v, i dq = 500 ma -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 15 16 17 18 19 20 s11 (db) frequency (ghz) irl vs. frequency vs. drain voltage 5.0 v 5.5 v 6.0 v temp = 25 c i dq = 500 ma -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 15 16 17 18 19 20 s22 (db) frequency (ghz) output return loss vs. frequency vs. temp. - 40 c 25 c 85 c v d = 6.0 v, i dq = 500 ma -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 15 16 17 18 19 20 s22 (db) frequency (ghz) orl vs. frequency vs. drain voltage 5.5 v 6.0 v 6.5 v temp = 25 c i dq = 500 ma
t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 5 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance : large signal 25 26 27 28 29 30 31 32 33 15 16 17 18 19 p sat (dbm) frequency (ghz) p sat vs. frequency vs. temperature p in = 10 dbm v d = 6 v, i dq = 500 ma 25 c 85 c - 40 c 25 26 27 28 29 30 31 32 33 15 16 17 18 19 p sat (dbm) frequency (ghz) p sat vs. frequency vs. drain voltage p in = 10 dbm i dq = 500 ma 5.5 v 6.0 v 5.0 v temp. = 25 c 15 18 21 24 27 30 33 -10 -8 -6 -4 -2 0 2 4 6 8 10 output power (dbm) input power (dbm) output power vs. input power vs. freq. 16 ghz 17 ghz 18 ghz temp = 25 c v d = 6 v, i dq = 500 ma 15 18 21 24 27 30 33 -10 -8 -6 -4 -2 0 2 4 6 8 10 output power (dbm) input power (dbm) output power vs. input power vs. v d 5.0 v 5.5 v 6.0 v temp = 25 c i dq = 500 ma freq = 17 ghz 15 18 21 24 27 30 33 -10 -8 -6 -4 -2 0 2 4 6 8 10 output power (dbm) input power (dbm) output power vs. input power vs. temp. 25 c 85 c freq = 17 ghz v d = 6 v, i dq = 500 ma - 40 c 18 20 22 24 26 28 30 32 34 15 16 17 18 19 power added efficiency (%) frequency (ghz) pae vs. frequency vs. drain voltage p in = 10 dbm i dq = 500 ma 5.5 v 6.0 v 5.0 v temp. = 25 c p in = 10 dbm i dq = 500 ma 5.5 v 6.0 v 5.0 v temp. = 25 c
t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 6 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance: large signal 15 18 21 24 27 30 -10 -8 -6 -4 -2 0 2 4 6 8 10 gain (db) input power (dbm) power gain vs. input power vs. frequency 16 ghz 17 ghz 18 ghz temp = 25 c v d = 6 v, i dq = 500 ma 0 3 6 9 12 15 18 21 24 27 30 33 36 -10 -8 -6 -4 -2 0 2 4 6 8 10 power added efficiency (%) input power (dbm) pae vs. input power vs. frequency 16 ghz 17 ghz 18 ghz temp = 25 c v d = 6 v, i dq = 500 ma 15 18 21 24 27 30 -10 -8 -6 -4 -2 0 2 4 6 8 10 gain (db) input power (dbm) power gain vs. input power vs. v d 5.0 v 5.5 v 6.0 v temp = 25 c i dq = 500 ma freq. = 17 ghz 0 3 6 9 12 15 18 21 24 27 30 33 36 -10 -8 -6 -4 -2 0 2 4 6 8 10 power added efficiency (%) input power (dbm) pae vs. input power vs. v d 5.0 v 5.5 v 6.0 v temp = 25 c i dq = 500 ma freq = 17 ghz 15 18 21 24 27 30 33 -10 -8 -6 -4 -2 0 2 4 6 8 10 gain (db) input power (dbm) power gain vs. input power vs. temp. 25 c 85 c freq = 17 ghz v d = 6 v, i dq = 500 ma - 50 c 0 3 6 9 12 15 18 21 24 27 30 33 36 -10 -8 -6 -4 -2 0 2 4 6 8 10 power added efficiency (%) input power (dbm) pae vs. input power vs. temperature freq = 17 ghz - 40 c 25 c 85 c v d = 6 v, i dq = 500 ma
t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 7 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance: large signal 350 400 450 500 550 600 650 700 750 800 850 -10 -8 -6 -4 -2 0 2 4 6 8 10 drain current (ma) input power (dbm) drain current vs. input power vs. freq. 16 ghz 17 ghz 18 ghz temp = 25 c v d = 6 v, i dq = 500 ma -2.0 -1.5 -1.0 -0.5 0.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 gate current (ma) input power (dbm) gate current vs. input power vs. freq. 16 ghz 17 ghz 18 ghz temp = 25 c v d = 6 v, i dq = 500 ma 500 550 600 650 700 750 800 850 900 950 15 16 17 18 19 drain current (ma) frequency (ghz) drain current vs. frequency vs. temperature p in = 10 dbm v d = 6 v, i dq = 500 ma 25 c 85 c - 40 c -2.0 -1.5 -1.0 -0.5 0.0 0.5 15 16 17 18 19 gate current (ma) frequency (ghz) gate current vs. frequency vs. temperature p in = 10 dbm v d = 6 v, i dq = 500 ma 25 c 85 c - 40 c 400 450 500 550 600 650 700 750 800 850 15 16 17 18 19 drain current (ma) frequency (ghz) drain current vs. freq. vs. drain voltage p in = 10 dbm i dq = 500 ma 5.5 v 6.0 v 5.0 v temp. = 25 c -2.0 -1.5 -1.0 -0.5 0.0 0.5 15 16 17 18 19 gate current (ma) frequency (ghz) gate current vs. freq. vs. drain voltage p in = 10 dbm i dq = 500 ma 5.5 v 6.0 v 5.0 v temp. = 25 c
t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 8 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance: l inearity -39 -36 -33 -30 -27 -24 -21 -18 -15 -12 15 16 17 18 19 20 21 22 23 24 25 im3 (dbc) p out /tone (dbm) im3 vs. p out /tone vs. frequency temp = 25 c, 10 mhz tone spacing 17 ghz 18 ghz 16 ghz v d = 6.0 v, i dq = 500 ma -75 -69 -63 -57 -51 -45 -39 -33 -27 -21 15 16 17 18 19 20 21 22 23 24 25 im5 (dbc) p out /tone (dbm) im5 vs. p out /tone vs. frequency temp = 25 c, 10 mhz tone spacing 17 ghz 18 ghz 16 ghz v d = 6.0 v, i dq = 500 ma -90 -80 -70 -60 -50 -40 -30 -20 -10 15 16 17 18 19 2 f 0 output power (dbc) frequency (ghz) 2 nd harmonic vs. freq. vs. temperature v d = 6 v, i dq = 500 ma 85 c 25 c p in = 10 dbm -90 -80 -70 -60 -50 -40 -30 -20 -10 15 16 17 18 19 2 f 0 output power (dbc) frequency (ghz) 2 nd harmonic vs. freq. vs. drain voltage i dq = 500 ma, temp = 25 c 5.5 v 5.0 v p in = 10 dbm 6.0 v -75 -69 -63 -57 -51 -45 -39 -33 -27 -21 15 16 17 18 19 20 21 22 23 24 25 im5 (dbc) p out /tone (dbm) im5 vs. p out /tone vs. temperature 25 c 85 c v d = 6 v, i dq = 500 ma, freq. = 17 ghz, 10 mhz tone spacing -39 -36 -33 -30 -27 -24 -21 -18 -15 -12 15 16 17 18 19 20 21 22 23 24 25 im3 (dbc) p out /tone (dbm) im3 vs. p out /tone vs. temperature 25 c 85 c v d = 6 v, i dq = 500 ma, freq. = 17 ghz, 10 mhz tone spacing
t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 9 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com application information bias - up procedure 1. set i d limit to 100 0 ma, i g limit to 4 ma 2. apply - 2 v to v g for pinch off 3. apply +6 v to v d 4. adjust v g more positive until i dq = 50 0 ma (v g ~ - 0.6 v typical ) 5. apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g to - 2 v. ensure i dq ~ 0ma 3. set v d to 0 v 4. turn off v d supply 5. turn off v g supply pin description p in n o. symbol description 1, 2, 4, 6, 8 - 9 , 16 - 17, 19 , 21, 23 - 25 , 32 gnd recommend grounding on pcb 3 , 7, 10 - 15, 18, 22, 26, 28, 30 n/c no internal connection 5 rf in input; matched to 50 ; dc blocked 20 rf out output ; matched to 50 ; dc blocked 2 7, 29 v d 1 , v d 2 drain voltage; b ias network is required; see recommended application information above. 31 v g gate voltage; b ias network is required; see recommended application information above. 33 gnd ground paddle. multiple vias should be employed to minimize inductance and thermal resistance.
t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 10 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com evaluation board bill of material reference des. value description manuf. part number c1 C c3 1000 pf cap, 0402 , x7r various c4 0.01 uf cap, 0402 , x7r various c5 C c 7 1 0 f cap, 1206 , x5r various r1 C r3 5.1 ohms res, 0402 various r4 C r 6 0 ohms res, 0402 ( jumper r equired for above evb design) various
t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 11 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com mechanical information units: inches tolerances: unless specified x.xx = 0.01 x.xxx = 0.005 materials: base: ceramic lid: plastic all metalized features are au plated part is epoxy sealed marking: 2621 : part number yy: part assembly year ww: part assembly week m xxx : lot id
t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 12 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com recommended soldering temperature profile
t ga26 21 - sm 16 C 18.5 ghz 1 w ga as power amplifier preliminary datasheet: rev - 11 - 07 - 1 4 - 13 of 13 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provid ed "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant informa tion before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with r egard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure w ould reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint : web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability compatible with the latest version of j - std - 020, lead - free solder, 2 6 0 c. rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating level 3 at 260 c convection reflow the part is rate d moisture sensitivity level 3 at 260 c per jedec standard ipc/jedec j - std - 020. eccn us department of commerce : ear99

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